发明名称 METHOD FOR THE SELECTIVE METALLIZATION OF A SUBSTRATE AND A CIRCUIT CARRIER PRODUCED ACCORDING TO THIS METHOD
摘要 PURPOSE: A selective substrate metalizing method and a circuit carrier produced by the same method are provided to sediment palladium by opening the pore of the pore structure of aluminosilicate or securing the accessibility for the aluminosilicate. CONSTITUTION: A selective substrate metalizing method is as follows. A layer close to the surface of substrate is removed through an ablation method. The substrate comprises a material portion made of plastic. The plastic includes one of aluminosilicates and tectoaluminosilicates. The metal is precipitated at an outer edge region of the pore for forming a flat metalized layer on the surface of the substrate.
申请公布号 KR20120082820(A) 申请公布日期 2012.07.24
申请号 KR20120002484 申请日期 2012.01.09
申请人 LPKF LASER & ELECTRONICS AG 发明人 JOHN WOLFGANG;ROESENER BERND
分类号 C23C18/16;B23K26/00 主分类号 C23C18/16
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