发明名称 |
METHOD FOR THE SELECTIVE METALLIZATION OF A SUBSTRATE AND A CIRCUIT CARRIER PRODUCED ACCORDING TO THIS METHOD |
摘要 |
PURPOSE: A selective substrate metalizing method and a circuit carrier produced by the same method are provided to sediment palladium by opening the pore of the pore structure of aluminosilicate or securing the accessibility for the aluminosilicate. CONSTITUTION: A selective substrate metalizing method is as follows. A layer close to the surface of substrate is removed through an ablation method. The substrate comprises a material portion made of plastic. The plastic includes one of aluminosilicates and tectoaluminosilicates. The metal is precipitated at an outer edge region of the pore for forming a flat metalized layer on the surface of the substrate. |
申请公布号 |
KR20120082820(A) |
申请公布日期 |
2012.07.24 |
申请号 |
KR20120002484 |
申请日期 |
2012.01.09 |
申请人 |
LPKF LASER & ELECTRONICS AG |
发明人 |
JOHN WOLFGANG;ROESENER BERND |
分类号 |
C23C18/16;B23K26/00 |
主分类号 |
C23C18/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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