| 摘要 |
FIELD: electricity. ^ SUBSTANCE: connected to the circuit setting the generator oscillation frequency is a reference capacitor with a known capacity value Cm. One determines the generator period value T1. Then one disconnects the reference capacitor an determines the generator period value T2. By the Cm, T1 and T2 one determines the generator circuit capacity value Cc. Then a device being verified is connected to the circuit. Applied thereto is increasing reverse bias voltage. At moments of time in the process of the reverse bias voltage increase one measures and memorises discrete values of reverse bias voltage and discrete values of the generator alternating voltage. One determines the generator nth period value T1. One determines and memorises the mean value of reverse bias voltage within the nth measurement interval. By the Cc, T2 and Tn values one determines and memorises he value of total capacity of the device being verified within the nth measurement interval. By the values and the corresponding mean values of reverse bias voltage one determines the volt-farad characteristic of the device being verified. ^ EFFECT: extension of functional capabilities, testing procedure simplification, performance increase, possibility of automated determination of volt-farad characteristics of semiconductor power devices in low conductivity condition. ^ 4 cl, 7 dwg |
