| 摘要 |
PURPOSE: A temperature sensor, a temperature sensor manufacturing method, a semiconductor device, a semiconductor device manufacturing method, and a semiconductor device controlling method are provided to have the same structure with a semiconductor device constituting a memory or a logic circuit and enable to manufacture with the high compatibility. CONSTITUTION: A temperature sensor comprises a substrate(10) and charge trap type structures. The charge trap type structures are laminated on the substrate. The charge trap type structure comprises a silicon dioxide film(11), an oxide aluminum film(13), and an electrode(14). A Gas-cluster ion-beam investigation by gas in which an oxygen ion is injected or the gas including the oxygen is enforced on a surface of the oxide aluminum film A temperature corresponding to a flat band voltage can be measured by measuring the flat band voltage of the charge trap type structure.
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