| 摘要 |
<p>PURPOSE: A formation method of a photo-mask is provided to execute a re-etching process at the portion in which a defect is generated by placing a self-assembly monomer layer between a mask layer and a resist layer. CONSTITUTION: A mask layer(120), a self-assembled monolayer(110), and a resist layer are formed on a light projecting board. A resist pattern limiting an etching region is formed by selectively exposing the surface of the self-assembled monolayer. The etching region is firstly etched by using the resist pattern as an etching mask. A mask pattern is formed by secondly etching a remaining portion of the self-assembled monolayer and the mask layer. The self-assembled monolayer of a non-etching region is eliminated.</p> |
