METHOD FOR GENERATION OF OXIDE LAYER ON ANODES OF OXIDE-SEMICONDUCTOR AND ELECTROLYTIC CAPACITORS

摘要

FIELD: electricity. ^ SUBSTANCE: method for generation of oxide layer on anodes of oxide-semiconductor and electrolytic capacitors is based on electrochemical treatment of the anodes placed into an electrolyte tank and includes anodes shaping and determination of the electrolyte resistance at the anodes shaping process beginning; one stabilises the allowable value of dissipation power released on the capacitors anodes PADD until oxidation voltage is reached; one measures voltage on the electrolyte tank UT and the anode current actual value la, determines voltage on the capacitors anodes Ua from the formula Ua=UT-laÇèRelectrolyte where la is the anode current actual value (A), Relectrolyte - is the electrolyte resistance at the anodes shaping process beginning (O); then one adjusts the anode current actual value from the formula la=PADD/Ua where PADD (Wt) is conditioned by the technological process until oxidation voltage is reached on the capacitors anodes; then one switches over to the mode of adjustment of voltage on the electrolyte tank maintaining voltage on the capacitors anodes equal to oxidation voltage. ^ EFFECT: reduction of dissipation power time and the oxidation process duration. ^ 5 dwg