| 摘要 |
<p>An active pattern and photoresist pattern are formed with a mask. The photoresist pattern is ashed based on the predetermined width of an etch stopper (57P2) formed from silicon nitride layer. An insulating layer underlying the ashed pattern is patterned to form the etch stopper. A source electrode and a drain electrode are patterned with mask (M3) e.g. diffraction mask. An independent claim is included for method for fabricating LCD device.</p> |
