| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device. <P>SOLUTION: A semiconductor device of the present invention comprises a semiconductor element formed above a semiconductor substrate, a first insulation film formed above the semiconductor element, and a fuse element F formed on the first insulation film and composed of a first conductive film containing aluminium (Al). The semiconductor device further comprises: first wiring formed on the first insulation film and composed of the first conductive film; and a second insulation film formed on the first wiring. A program region of the fuse element F is exposed on an opening OA1 provided in the second insulation film. During a period other than a program period of the fuse element F and a reading period of data programmed in the fuse element, both ends of the fuse element F are kept at ground potential. For example, one end of the fuse element F is connected to a ground potential and the other end is connected to a ground potential via a switching element. <P>COPYRIGHT: (C)2012,JPO&INPIT |
