| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device for producing a group III nitride crystal capable of producing a group III nitride crystal by preventing the evaporation of flux from a melt mixture to the outside. <P>SOLUTION: A stay of molten Na 112 is formed in a pipe 104 connecting a reaction vessel 103 including a holding vessel 101 for holding a melt containing a group III metal and flux to a nitrogen gas cylinder 105, and the pipe 104 is temporarily blocked by the stay. By this, the lowering of flux contained in the melt in the holding vessel can be prevented during a crystal growing time (several ten-several hundred hours), and resultantly a group III nitride crystal having a large size and higher quality can be produced more inexpensively than before. <P>COPYRIGHT: (C)2012,JPO&INPIT |
