| 摘要 |
A method for selective deposition of semiconductor materials in semiconductor processing is disclosed. In some embodiments, the method includes providing a patterned substrate comprising a first region and a second region, where the first region comprises an exposed first semiconductor material and the second region comprise an exposed insulator material. The method further includes selectively providing a film of the second semiconductor material on the first semiconductor material of the first region by providing a precursor of a second semiconductor material, a carrier gas that is not reactive with chlorine compounds, and tin-tetrachloride (SnCl4). The tin-tetrachloride inhibits the deposition of the second semiconductor material on the insulator material of the second region. |
