发明名称 |
LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN III-NITRIDE LAYERS |
摘要 |
A III-N layer structure is described that includes a III-N buffer layer on a foreign substrate, an additional III-N layer, a first III-N structure, and a second III-N layer structure. The first III-N structure atop the III-N buffer layer includes at least two III-N layers, each having an aluminum composition, and the III-N layer of the two III-N layers that is closer to the III-N buffer layer having the larger aluminum composition. The second III-N structure includes a III-N superlattice, the III-N superlattice including at least two III-N well layers interleaved with at least two III-N barrier layer. The first III-N structure and the second III-N structure are between the additional III-N layer and the foreign substrate. |
申请公布号 |
WO2012071272(A3) |
申请公布日期 |
2012.07.19 |
申请号 |
WO2011US61407 |
申请日期 |
2011.11.18 |
申请人 |
TRANSPHORM, INC.;KELLER, STACIA;FICHTENBAUM, NICHOLAS |
发明人 |
KELLER, STACIA;FICHTENBAUM, NICHOLAS |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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