| 摘要 |
<p>The present invention prevents the formation of hillocks on source electrodes and drain electrodes during annealing at high temperatures of thin-film transistors provided with a channel protective layer. The source electrode (16S) and drain electrode (16D) on a thin-film transistor substrate, which has a channel protective film (15a) provided in islands so as to cover a channel part of an oxide semiconductor film (14), are constituted of an aluminum alloy film or a laminated film containing an aluminum alloy film.</p> |
