SPRAY MEMBER FOR USE IN SEMICONDUCTOR MANUFACTURE, AND PLASMA TREATMENT APPARATUS HAVING SAME

摘要

The present invention relates to a plasma treatment apparatus comprising: a process chamber in which a plurality of substrates are accommodated and a plasma treatment process is performed; a support member installed in the process chamber such that the plurality of substrates are placed on the same plane of the support member; a spray member which is arranged opposite the support member, and which has a plurality of independent baffles for independently spraying at least one reaction gas and purge gas from a position corresponding to each of the plurality of substrates placed on the support member; and a driving unit which rotates the support member or the spray member such that the baffles of the spray member may sequentially circle around and above each of the plurality of substrates placed on the support member. The spray member includes a plasma generator installed in at least one baffle which sprays reaction gas among the plurality of baffles, so as to generate plasma from the reaction gas being sprayed onto the substrate.