| 摘要 |
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion. The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer. |
