发明名称 |
METHODS FOR FORMING A MEMORY CELL HAVING A TOP OXIDE SPACER |
摘要 |
Methods for fabricating a semiconductor memory cell that has a spacer layer are disclosed. A method includes forming a plurality of source/drain regions in a substrate where the plurality of source/drain regions are formed between trenches, forming a first oxide layer above the plurality of source/drain regions and in the trenches, forming a charge storage layer above the oxide layer and separating the charge storage layer in the trenches where a space is formed between separated portions of the charge storage layer. The method further includes forming a spacer layer to fill the space between the separated portions of the charge storage layer and to rise a predetermined distance above the space. A second oxide layer is formed above the charge storage layer and the spacer layer and a polysilicon layer is formed above the second oxide layer. |
申请公布号 |
US2012181601(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201213428848 |
申请日期 |
2012.03.23 |
申请人 |
FANG SHENQING;HUI ANGELA;XUE GANG;NICKEL ALEXANDER;SAHOTA KASHMIR;BELL SCOTT;CHEN CHUN;LO WAI |
发明人 |
FANG SHENQING;HUI ANGELA;XUE GANG;NICKEL ALEXANDER;SAHOTA KASHMIR;BELL SCOTT;CHEN CHUN;LO WAI |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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