OXIDE SINTERED BODY AND SPUTTERING TARGET

摘要

Provided is an oxide sintered body which can be suitably used for producing an oxide semiconductor film for display devices, the oxide sintered body having high conductivity and relative density, and being capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. When X-ray diffracted, the oxide sintered body has a Zn2SnO4 phase as a main phase and a ZnXSnXInYOm phase (X, Y and m being an integer) which is a bixbyite type crystalline structure, and when the content (atom%) of the metallic elements contained in the oxide sintered body is [Zn], [Sn] and [In], the ratio of [In] with respect to [Zn]+[Sn]+[In], and the ratio of [Zn] and the ratio of [Sn] with respect to [Zn]+[Sn] each satisfies the following formulas. [In]/([Zn]+[Sn]+[In])=0.01-less than 0.25 [Zn]/([Zn]+[Sn])=0.50-0.80 [Sn]/([Zn]+[Sn])=0.20-0.50