| 发明名称 |
TARGET FORMED OF SINTERING-RESISTANT MATERIAL OF HIGH-MELTING POINT METAL ALLOY, HIGH-MELTING POINT METAL SILICIDE, HIGH-MELTING POINT METAL CARBIDE, HIGH-MELTING POINT METAL NITRIDE, OR HIGH-MELTING POINT METAL BORIDE, PROCESS FOR PRODUCING THE TARGET, ASSEMBLY OF THE SPUTTERING TARGET-BACKING PLATE, AND PROCESS FOR PRODUCING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable to produce relatively easily a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride, which has poor machinability, to provide the target in which the generation of cracks during the target production and high power sputtering can be inhibited effectively, and the reaction of the target raw material with the die during hot pressing can be inhibited, and further the warpage of the target can be reduced, and to provide a process for producing the same. <P>SOLUTION: The target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprises a structure in which a target material 3 formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate 2, 2' other than the target material are bonded. <P>COPYRIGHT: (C)2012,JPO&INPIT |
