| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which on-resistance is not increased though reverse breakdown voltage is increased. <P>SOLUTION: A semiconductor device 100 comprises: an n<SP POS="POST">+</SP>-type semiconductor layer 116; an n-type drift layer 112 containing an n-type impurity of concentration lower than that of the n<SP POS="POST">+</SP>-type semiconductor layer 116; a p-type body region 118 including a body portion 118a formed on a surface of the drift layer 112 and having a deep diffusion depth, and a channel portion 118b having a shallow diffusion depth; an n<SP POS="POST">+</SP>-type source region 120 formed on a surface of the body region 118; and a gate electrode 124 formed on the channel portion 118b via a gate insulation layer 122. On the drift layer 112 at a region not overlapping the body region 118 when viewed from above, an n-type low resistance region 144a containing an n-type impurity of concentration higher than that of the drift layer 112 is formed so as to contact the n<SP POS="POST">+</SP>-type semiconductor layer 116. <P>COPYRIGHT: (C)2012,JPO&INPIT |
