TRENCH IMPLANTATION METHOD AND FILM FORMING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a trench implantation method capable of forming an expandable film and a film which serves as an oxidation barrier inside a trench in spite of further progress of microfabrication.

SOLUTION: A trench implantation method includes: a step (step 3) of forming an oxidation barrier film inside a trench; a step (step 4) of forming an expandable film on the oxidation barrier film; a step (step 5) of implanting the trench with an implantation material which shrinks due to burning; and a step (step 6) of burning the implantation material. The step 3 further includes a step (step 31) of forming a first seed layer inside the trench by supplying an aminosilane-based gas and a step (step 32) of forming a silicon nitride film on the first seed layer. The step 4 further includes a step (41) of forming a second seed layer on the silicon nitride film by supplying the aminosilane-based gas, and a step (step 42) of forming a silicon film on the second seed layer.

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