发明名称 |
HEXAGONAL REO TEMPLATE BUFFER FOR III-N LAYERS ON SILICON |
摘要 |
A III-N on silicon structure including a substrate of single crystal silicon with a cubic crystal structure and a layer of single crystal III-N material. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface. The first and second transition layers are positioned between the substrate and the layer of III-N material with the one surface lattice matched to the substrate and the opposed surface lattice matched to the layer of III-N material.
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申请公布号 |
US2012183767(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201113328270 |
申请日期 |
2011.12.16 |
申请人 |
DARGIS RYTIS;CLARK ANDREW;LEBBY MICHAEL |
发明人 |
DARGIS RYTIS;CLARK ANDREW;LEBBY MICHAEL |
分类号 |
B32B9/04;B32B5/00;C30B23/02;C30B25/02 |
主分类号 |
B32B9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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