| 摘要 |
An integrated circuit device is described that includes a 3D memory comprising a plurality of self-aligned stacks of word lines orthogonal to and interleaved with a plurality of self-aligned stacks of bit lines. Data storage structures such as dielectric charge storage structures, are provided at cross points between word lines and bit lines in the plurality of self-aligned stacks of word lines interleaved with the plurality of self-aligned stacks of bit lines. |
