发明名称 FAILURE ANALYSIS METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To analyze failure of a semiconductor using differential image analysis in a short time efficiently with high precision. <P>SOLUTION: Sweeping of a test pattern is started for a non-defective and defective semiconductor sample to obtain an emission image by a microscope. A reaction box that surrounds the obtained emission image is set and transformed into positional data of a layout coordinate system. An area where the reaction box of the non-defective sample overlaps with that of the defective sample is calculated. The reaction box whose overlapped area is smaller than a threshold value is determined to be a difference box. The difference box is displayed on an emission analysis controller. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012137466(A) 申请公布日期 2012.07.19
申请号 JP20100291761 申请日期 2010.12.28
申请人 RENESAS ELECTRONICS CORP 发明人 SHIMASE AKIRA;UCHIKADO AKIHITO;MASHIMA TOSHIYUKI
分类号 G01R31/302;G01R31/28;H01L21/66 主分类号 G01R31/302
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