发明名称 |
FAILURE ANALYSIS METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To analyze failure of a semiconductor using differential image analysis in a short time efficiently with high precision. <P>SOLUTION: Sweeping of a test pattern is started for a non-defective and defective semiconductor sample to obtain an emission image by a microscope. A reaction box that surrounds the obtained emission image is set and transformed into positional data of a layout coordinate system. An area where the reaction box of the non-defective sample overlaps with that of the defective sample is calculated. The reaction box whose overlapped area is smaller than a threshold value is determined to be a difference box. The difference box is displayed on an emission analysis controller. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012137466(A) |
申请公布日期 |
2012.07.19 |
申请号 |
JP20100291761 |
申请日期 |
2010.12.28 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
SHIMASE AKIRA;UCHIKADO AKIHITO;MASHIMA TOSHIYUKI |
分类号 |
G01R31/302;G01R31/28;H01L21/66 |
主分类号 |
G01R31/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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