SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which can achieve both pressure resistance performances in lengthwise pressure resistance and pressure resistance at a gate electrode end while achieving high channel mobility.

SOLUTION: A semiconductor device in which an opening is provided on a GaN-based laminate including an n-type drift layer and a p-type layer arranged on the n-type drift layer, comprises a regrowth layer including a channel and arranged so as to cover the opening, and a gate electrode arranged on the regrowth layer and along the regrowth layer. The opening reaches the n-type drift layer and a gate electrode end is arranged such that there is no portion extending beyond the p-type layer when viewed from above.

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