摘要 |
Apparatus and methods for forming metal nitride films using a processing chamber are provided. The method comprises loading multiple substrates onto a substrate support assembly of the processing chamber, wherein the substrate support is in a loading position during the loading multiple substrates and moving the substrate support from the loading position upwards to a processing position, wherein the multiple substrates are positioned above a first opening for exhausting process gases form the processing chamber, and flowing process gases comprising a metal containing precursor and a nitrogen containing precursor perpendicular to the surfaces of the multiple substrates to form a metal nitride film on the multiple substrates, wherein after contacting the surfaces of the multiple substrates, the process gases flow across the surfaces of the multiple substrates and down toward the first opening. |
申请人 |
APPLIED MATERIALS, INC.;NGUYEN, TUAN, ANH;QUACH, DAVID, H.;SHEN, KUAN-CHIEN;DUBOUST, ALAIN;KOJIRI, HIDEHIRO;HSU, WEI-YUNG |
发明人 |
NGUYEN, TUAN, ANH;QUACH, DAVID, H.;SHEN, KUAN-CHIEN;DUBOUST, ALAIN;KOJIRI, HIDEHIRO;HSU, WEI-YUNG |