发明名称 |
MEMORY DEVICES INCORPORATING STRINGS OF MEMORY CELLS HAVING STRING SELECT GATES, AND METHODS OF OPERATING AND FORMING THE SAME |
摘要 |
Strings of memory cells having a string select gate configured to selectively couple ends of a string to a data line and a source line concurrently, memory devices incorporating such strings and methods for accessing and forming such strings are provided. For example, non-volatile memory devices are disclosed that utilize vertical structure NAND strings of serially-connected non-volatile memory cells. One such string including two or more serially-connected non-volatile memory cells where each end of the string shares a string select gate with the other end of the string is disclosed. |
申请公布号 |
WO2012096838(A2) |
申请公布日期 |
2012.07.19 |
申请号 |
WO2012US20463 |
申请日期 |
2012.01.06 |
申请人 |
MICRON TECHNOLOGY, INC.;LIU, ZENGTAO |
发明人 |
LIU, ZENGTAO |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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