发明名称 |
Semiconductor Device, An Electronic Device and an Electronic Apparatus |
摘要 |
A semiconductor device 1 includes: a base 2 mainly formed of a semiconductor material; a gate electrode 5; and a gate insulating film 3 provided between the base 2 and the gate electrode 5. The gate insulating film 3 is formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating film 3 is provided in contact with the base 2, and contains hydrogen atoms. The gate insulating film 3 has a region where A and B satisfy the relation: B/A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least apart of the gate insulating film 3 in the thickness direction thereof. |
申请公布号 |
US2012181633(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201213430181 |
申请日期 |
2012.03.26 |
申请人 |
MIYATA MASAYASU;SEIKO EPSON CORPORATION |
发明人 |
MIYATA MASAYASU |
分类号 |
G02F1/136;H01L29/78;C04B35/01;H01L21/28;H01L21/30;H01L21/316;H01L29/51 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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