SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF SINGLE CRYSTAL SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF SINGLE CRYSTAL SILICON CARBIDE

摘要

PROBLEM TO BE SOLVED: To provide an inexpensive seed material for liquid phase epitaxial growth of silicon carbide.

SOLUTION: The seed material 12 for liquid phase epitaxial growth of single crystal silicon carbide has a surface layer including polycrystalline silicon carbide whose crystal polymorph is 3C. Through Raman spectroscopic analysis where the excitation wavelength of the surface layer is set at 532 nm, peaks other than TO (transverse optical) peak and LO (longitudinal optical) peak are observed as peaks derived from polycrystalline silicon carbide whose crystal polymorph is 3C.

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