| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition having superior lithography characteristics and capable of forming a favorable-shape resist pattern, and to provide a resist pattern formation method. <P>SOLUTION: The resist composition includes a base component (A) of which solubility to a developer is changed by the operation of acid, and an acid generator component (B) which generates acid by exposure. The base component (A) includes a polymer compound (A1) having a constitutional unit (a5) represented by a general formula (a5-1). In the general formula (a5-1), X is a single bond or a bivalent linking group, and W represents a cyclic alkylene group that may includes an oxygen atom at an arbitrary position. <P>COPYRIGHT: (C)2012,JPO&INPIT |
