| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor light-emitting element and a nitride semiconductor light-emitting element capable of suppressing deterioration in contact properties of an n-side electrode caused by heating to suppress voltage reduction even when a high-reflectance Al layer is used for the n-side electrode and used for a contact layer with an n-type conductive layer. <P>SOLUTION: A nitride semiconductor light-emitting element has: an n-type conductive substrate formed of a nitride semiconductor material; an n-type conductive layer, a light-emitting layer, and a p-type conductive layer formed on the n-type conductive substrate; a p-side electrode provided on a p-type semiconductor layer; and an n-side electrode provided on the n-type conductive substrate opposite to the p-type conductive layer. When the n-side electrode is provided on the n-type conductive substrate, first of all, the n-type conductive substrate is irradiated with plasma in an atmosphere of a chlorine-based compound gas containing Si to form an ion irradiation layer on the n-type conductive substrate (an irradiation step, a step S52). Next, an electrode including an Al electrode and a bonding electrode is formed on the ion irradiation layer to obtain the n-side electrode (an electrode formation step, a step S60). <P>COPYRIGHT: (C)2012,JPO&INPIT |
