| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film formation method and a substrate processing apparatus which can increase the number of substrates capable of processing at once, and improve productivity of a GaN epitaxial film. <P>SOLUTION: A GaN film formation method comprises: a transferring step of transferring a substrate into a processing chamber; an initial film formation step including a first step of supplying a gallium chloride gas into the processing chamber, a first purge step of purging the gallium chloride gas from the processing chamber, a second step of supplying ammonia gas into the processing chamber after performing the first purge step, and a second purge step of purging the ammonia gas from the processing chamber; and an epitaxial film formation step of simultaneously supplying the gallium chloride gas and the ammonia gas into the processing chamber after performing the initial film formation step to form an epitaxial film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
