发明名称 |
MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.
|
申请公布号 |
US2012184054(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201213350102 |
申请日期 |
2012.01.13 |
申请人 |
SUZUKI KUNIHIKO;HIRATA HIRONOBU |
发明人 |
SUZUKI KUNIHIKO;HIRATA HIRONOBU |
分类号 |
H01L21/205;C23C16/455;C23C16/52 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|