发明名称 MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE
摘要 Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.
申请公布号 US2012184054(A1) 申请公布日期 2012.07.19
申请号 US201213350102 申请日期 2012.01.13
申请人 SUZUKI KUNIHIKO;HIRATA HIRONOBU 发明人 SUZUKI KUNIHIKO;HIRATA HIRONOBU
分类号 H01L21/205;C23C16/455;C23C16/52 主分类号 H01L21/205
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