| 摘要 |
A light emitting device having a dielectric layer is provided to perform operational functions with AC power without using an additional device by including a capacitor function layer. An n-compound semiconductor layer(110) having an etched part is formed on a substrate(100). An active layer(120) is formed on an unetched part of the n-compound semiconductor layer. A first p-compound semiconductor layer(130) is formed on the active layer. A dielectric layer(140) is formed on the first p-compound semiconductor layer. A second p-compound semiconductor layer(150) is formed on the dielectric layer. A p-electrode(180p) is formed on the second p-compound semiconductor layer. An n-electrode(180n) is formed on the etched part of the n-compound semiconductor layer. |
