| 摘要 |
A light emitting device and its manufacturing method are provided to improve a light emissive efficiency by enlarging a contact area between a P type compound semiconductor layer and a transparent electrode layer using a plurality of grooves of the P type compound semiconductor layer. A light emitting device comprises an N type compound semiconductor layer(30), an active layer, a P type compound semiconductor layer, an ohmic electrode, a P type metal pad and an N type metal pad. The active layer(40) is formed at least an upper portion of the N type compound semiconductor layer. The P type compound semiconductor layer(50) is formed on the active layer. The P type compound semiconductor layer includes a plurality of grooves, wherein the grooves are formed due to a lattice defect. The ohmic electrode is formed along an upper surface of the P type compound semiconductor layer. The P type metal pad is formed on the ohmic electrode. The N type metal pad is formed on the N type compound semiconductor layer. |
