| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device for producing a SiC single crystal, which can suppress generation of polycrystals. <P>SOLUTION: A tool 41 and a crucible 6 are accommodated in a chamber 1. An SiC melt is housed in the crucible 6. The tool 41 includes a seed shaft 411 and a cover member 412. The seed shaft 411 can be raised and lowered, and an SiC seed crystal 9 is attached to the bottom surface thereof. The cover member 412 is arranged at the bottom end of the seed shaft 411. The cover member 412 is a frame with an open lower end, and the bottom end of the seed shaft is arranged in the inside of the cover member 412. When producing an SiC single crystal, the SiC seed crystal is immersed in the SiC melt. Also, the bottom of the cover member 412 is immersed in the SiC melt. For that reason, the cover member 412 covers and retains the heat of the portion of the SiC melt around the SiC single crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
