| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves a sufficient driving voltage for a high-potential -side switching element. <P>SOLUTION: A semiconductor device comprises a terminal for an input voltage, a terminal for output, a terminal for a ground potential, a terminal for a power supply voltage, and a first terminal. In the semiconductor device, a first chip, a second chip, and a third chip are sealed in one package. The first chip includes a first MOS having a source-drain path between the terminal for an input voltage and the terminal for output. The second chip includes a second MOS having a source-drain path between the terminal for output and the terminal for a ground potential. The third chip include a PMOS having a first driving circuit whose output is connected to the gate of the first MOS, a second driving circuit whose output is connected to the gate of the second MOS, a drain connected to the terminal for a power supply voltage, and a source connected to the first terminal. Capacitance can be connected between the first terminal and the terminal for output. When the second MOS is ON, the PMOS becomes ON, and when the second MOS is OFF, the PMOS becomes OFF. <P>COPYRIGHT: (C)2012,JPO&INPIT |
