| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of high-speed response. <P>SOLUTION: A solid-state imaging device comprises a pair of electrodes, a photoelectric conversion layer arranged between the pair of electrodes and a photoelectric conversion element moving a signal charge occurring in the photoelectric conversion layer due to light penetrated through one electrode of the pair of electrodes and incident on the photoelectric conversion layer, to the pair of electrodes by voltage applied between the pair of electrodes. The photoelectric conversion layer includes at least one organic compound semiconductor (note that a case where the photoelectric conversion layer includes DCM1 is excluded). Assuming that hole mobility of the photoelectric conversion layer is h1 and electron mobility is e1, 0.1<h1/e1<10 is satisfied, and the hole mobility h1 is equal to or more than 8.5×10E-6 cm<SP POS="POST">2</SP>/V s and equal to or less than 3.8×10E-5 cm<SP POS="POST">2</SP>/V s, and the electron mobility e1 is equal to or more than 9.3×10E-7 cm<SP POS="POST">2</SP>/V s and equal to or less than 7.6×10E-5 cm<SP POS="POST">2</SP>/V s. <P>COPYRIGHT: (C)2012,JPO&INPIT |
