发明名称 CHARGED PARTICLE BEAM DEVICE AND METHOD OF MANUFACTURING SAMPLE
摘要 <P>PROBLEM TO BE SOLVED: To solve such a problem that precision in removing a damaged layer of a sample depends on the skill of an operator, the damaged layer arising from working on the sample with an FIB system. <P>SOLUTION: During work of removing a damaged layer which arises from an ion beam, transmitted electrons are detected with a two-dimensional detector, the transmitted electrons arising by irradiating a sample with an electron beam formed by an electron beam optical system, and the timing of the completion of the work of removing the damaged layer is determined on the basis of the blur amount of a diffraction pattern obtained with the two-dimensional detector. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012138283(A) 申请公布日期 2012.07.19
申请号 JP20100290544 申请日期 2010.12.27
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 NANRI TERUTAKA;TOMIMATSU SATOSHI;AGEMURA TOSHIHIDE
分类号 H01J37/317;H01J37/22;H01J37/244;H01J37/28 主分类号 H01J37/317
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