FORMATION METHOD OF OPENING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an opening in an insulation film on a conductive layer so as to expose the conductive layer located at a lower part of a laminated structure without at least increasing the number of photo masks.

SOLUTION: A part of a lower conductive layer in a laminated structure, where an opening is provided, is exposed in advance with an etching mask formed by using a photo mask which is the same as a photo mask used for forming the opening. Then, a protective insulation film is formed, and an opening is formed in the protective insulation film so that an upper conductive layer in the laminated structure is not exposed at the opening. The formation method of the opening may be applied to a manufacturing method of a semiconductor device.

COPYRIGHT: (C)2012,JPO&INPIT