发明名称 TRANSPARENT CONDUCTIVE THIN FILM AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a transparent conductive thin film which is formed of a metal thin film having a thickness of 5-20 nm and containing silver and has low resistivity and high transmittance, and to provide a method for manufacturing the same. <P>SOLUTION: After a transparent substrate is subjected to ion bombardment treatment, a metal thin film having a thickness of 5-20 nm, preferably 5-10 &mu;m, and containing silver is vapor-deposited on the transparent substrate to manufacture the transparent conductive thin film which has a resistivity of 10<SP POS="POST">-4</SP>&Omega; cm or lower and transmittances of light at wavelengths of 300 and 500 nm of 70% or higher, preferably 80% or higher. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012138228(A) 申请公布日期 2012.07.19
申请号 JP20100289107 申请日期 2010.12.27
申请人 DOWA HOLDINGS CO LTD 发明人 KUNO SEIICHI;SUNAJI NAOYA
分类号 H01B13/00;C23C14/14;C23C14/32;H01B5/14 主分类号 H01B13/00
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