| 摘要 |
A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist over a substrate where an etch target layer is formed, doping at least one impurity selected from group III elements and group V elements, of the periodic table, into the first photoresist, forming a photoresist pattern over the first photoresist, performing a dry etching process using the photoresist pattern to expose the first photoresist, etching the first photoresist by an oxygen-based dry etching to form a first photoresist pattern where a doped region is oxidized, and etching the etch target layer using the first photoresist pattern as an etch barrier.
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