发明名称 |
Making Method of Sample for Evaluation of Laser Irradiation Position and Making Apparatus Thereof and Evaluation Method of Stability of Laser Irradiation Position and Evaluation Apparatus Thereof |
摘要 |
A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction. |
申请公布号 |
US2012184055(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201213428297 |
申请日期 |
2012.03.23 |
申请人 |
KAWAKAMI RYUSUKE;MASAKI MIYUKI;SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. |
发明人 |
KAWAKAMI RYUSUKE;MASAKI MIYUKI |
分类号 |
H01L21/66;H01L21/26 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|