发明名称 Making Method of Sample for Evaluation of Laser Irradiation Position and Making Apparatus Thereof and Evaluation Method of Stability of Laser Irradiation Position and Evaluation Apparatus Thereof
摘要 A method for making a sample for evaluation of laser irradiation position and evaluating the sample, and an apparatus which is switchable between a first mode of modification of semiconductor and a second mode of making and evaluating the sample. Specifically, a sample is made by irradiating a semiconductor substrate for evaluation with a pulse laser beam while the semiconductor substrate is moved for evaluation at an evaluation speed higher than a modifying treatment speed, each relative positional information between pulse-irradiated regions in the sample is extracted, and stability of the each relative positional information between pulse-irradiated regions is evaluated. The evaluation speed is such a speed that separates the pulse-irradiated regions on the sample from each other in a moving direction.
申请公布号 US2012184055(A1) 申请公布日期 2012.07.19
申请号 US201213428297 申请日期 2012.03.23
申请人 KAWAKAMI RYUSUKE;MASAKI MIYUKI;SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. 发明人 KAWAKAMI RYUSUKE;MASAKI MIYUKI
分类号 H01L21/66;H01L21/26 主分类号 H01L21/66
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