| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film on a tungsten film or a tungsten oxide film capable of reducing incubation time of the silicon oxide film even if the silicon oxide film is formed on the tungsten film or the tungsten oxide film. <P>SOLUTION: A method for forming a silicon oxide film on a tungsten film or a tungsten oxide film comprises: a step (step 1) of forming the tungsten film or the tungsten oxide film on a workpiece; a step (step 2) of forming a seed layer on the tungsten film or the tungsten oxide film; and a step (step 3) of forming the silicon oxide film on the seed layer. This method forms the seed layer on the tungsten film or the tungsten oxide film by heating the workpiece and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
