| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride semiconductor substrate, by which it is possible to produce a large size group III nitride semiconductor substrate having few stacking faults. <P>SOLUTION: The method for producing a group III nitride semiconductor substrate includes: a first process comprising arranging a plurality of group III nitride seeds 110 each having a semipolar plane as a primary plane on the same flat plane so that the distribution of the plane orientation of the primary plane between respective seeds 110 becomes within ±0.5°C and then performing homoepitaxial growth on the semipolar plane to obtain a group III nitride semiconductor crystal and a second process for obtaining a group III nitride semiconductor substrate having a plane different from the semipolar plane as a primary plane, from the obtained group III nitride semiconductor crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
