METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The objective of the present invention is to provide a semiconductor device and a method of manufacturing thereof, wherein generation of a high electric field and occurrence of a dielectric breakdown can be inhibited. A method of manufacturing a semiconductor-device of the present invention is provided with: (a) a process for preparing an n+ substrate (1), which is a foundation comprising a first conductive-type silicon-carbide semiconductor; (b) a process for forming a recess structure (14) encircling an element-forming area on the n+ substrate (1), using a resist-pattern (13); and (c) a process for forming a guard-ring injection layer (3) within a recess bottom face (15) and a recess side face (20) of the recess structure (14), as a second conductive-type impurity layer, by injecting impurities through a resist-pattern (13). A corner section of the recess structure (14) is covered by the impurity layer (3).