| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to simplify a layered structure by horizontally arranging a photoelectric conversion layer. CONSTITUTION: A first electrode is formed on a substrate(10). A plurality of photoelectric conversion units(31,32,33) are horizontally arranged on a photoelectric conversion layer(30). The photoelectric conversion unit generates electric signals with regard to a preset color beam on the first electrode. A second electrode is formed on the photoelectric conversion layer. The photoelectric conversion unit includes a p/n, p/i/n or p/n bulk hetero junction layer. |
