| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of employing an upper and lower electrodes structure and excellent in internal quantum efficiency, light extraction efficiency, a drive voltage and mass productivity, and a manufacturing method of the nitride semiconductor light-emitting element. <P>SOLUTION: There are disclosed a nitride semiconductor light-emitting element including a reflection layer of a dielectric, a transparent conductive layer of an n-type nitride semiconductor, a p-type nitride semiconductor layer, a light-emitting layer and an n-type nitride semiconductor layer in this order, and a manufacturing method of the same. It is preferable that length of the transparent conductive layer in a direction perpendicular to a thickness direction is smaller than length of the p-type nitride semiconductor layer in a direction perpendicular to a thickness direction, respectively. It is preferable that the reflection layer of the dielectric contacts both side faces of the transparent conductive layer and a surface of the transparent conductive layer on the side of the reflection layer composed of the dielectric and contacts a part not contacting the transparent conductive layer of a surface of the p-type nitride semiconductor layer on the transparent conductive layer side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
