APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND CRUCIBLE USED FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing SiC single crystal, which is easy to supply carbon in the vicinity of an SiC seed crystal in manufacturing the SiC single crystal by a solution growth method.

SOLUTION: A crucible 6 in the manufacturing apparatus 100 includes: an upper storage chamber 621A having an inner diameter IDT; and a lower storage chamber 622A arranged at a lower part of the upper storage chamber 621A, which has an inner diameter smaller than the inner diameter IDT. An induction heating device 3 includes: an upper coil part 311 arranged around the upper storage chamber 621A; and a lower coil part 312 arranged around the lower storage chamber 622A. The lower coil part 312 generates an electromagnetic force larger than the electromagnetic force the upper coil part 311 generates in an SiC solution 8 in the upper storage chamber 621A, in the SiC solution 8 in the lower storage chamber 622A.

COPYRIGHT: (C)2012,JPO&INPIT