| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a schottky diode which has a ferroelectric layer, reduces a leak current when a reverse bias voltage is applied, and reduces voltage drop when a forward bias voltage is applied. <P>SOLUTION: A schottky diode 1 includes: a support substrate 11; an insulation film 12 formed on a surface of the support substrate 11; an adhesion layer 13 formed on the insulation film 12; a schottky metal layer 14 formed on the adhesion layer 13; a first dielectric layer 15 formed on a surface of the schottky metal layer 14 so as to make a schottky contact with the schottky metal layer 14 and to which Mn is added; a second dielectric layer 16 formed on a surface of the first dielectric layer 15 and to which additives such as Mn are not added; and an ohmic metal layer 17 formed on the second dielectric layer 16 so as to make an ohmic contact with the second dielectric layer 16. <P>COPYRIGHT: (C)2012,JPO&INPIT |
