发明名称 |
III-NITRIDE FLIP-CHIP SOLAR CELLS |
摘要 |
A III-nitride photovoltaic device structure and method for fabricating the III-nitride photovoltaic device that increases the light collection efficiency of the III-nitride photovoltaic device. The III-nitride photovoltaic device includes one or more III-nitride device layers, and the III-nitride photovoltaic device functions by collecting light that is incident on the back-side of the III-nitride device layers. The III-nitride device layers are grown on a substrate, wherein the III-nitride device layers are exposed when the substrate is removed and the exposed III-nitride device layers are then intentionally roughened to enhance their light collection efficiency. The collection of the incident light via the back-side of the device simplifies the fabrication of the multiple junctions in the device. The III-nitride photovoltaic device may include grid-like contacts, transparent or semi-transparent contacts, or reflective contacts.
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申请公布号 |
US2012180868(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201113279131 |
申请日期 |
2011.10.21 |
申请人 |
FARRELL ROBERT M.;NEUFELD CARL J.;TOLEDO NIKHOLAS G.;DENBAARS STEVEN P.;MISHRA UMESH K.;SPECK JAMES S.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
FARRELL ROBERT M.;NEUFELD CARL J.;TOLEDO NIKHOLAS G.;DENBAARS STEVEN P.;MISHRA UMESH K.;SPECK JAMES S.;NAKAMURA SHUJI |
分类号 |
H01L31/0264;H01L31/18 |
主分类号 |
H01L31/0264 |
代理机构 |
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