IMPROVED METHOD FOR MAKING PATTERN FROM SIDEWALL IMAGE TRANSFER

摘要

PROBLEM TO BE SOLVED: To provide an easy-to-implement method for producing a pattern partially defined by sidewall image transfer.

SOLUTION: A substrate 1 is provided with a layer of first material 2, a first etching mask 4, a covering layer 3 and a second etching mask. The covering layer 3 has a covered main area and an uncovered secondary area. The secondary area of the covering layer 3 is partially etched via the second etching mask to form a salient pattern. Lateral spacers are formed around the salient pattern defining a third etching mask. The second etching mask is eliminated. The covering layer 3 is etched by means of the third etching mask to form a salient pattern in the covering layer 3 and to uncover the first etching mask 4 and the first material 2. The layer of first material 2 is etched to form a pattern made from the first material 2.

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