| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can deposit an amorphous silicon film that can further improve surface roughness accuracy and respond to progress in microfabrication of a contact hole, a line and the like. <P>SOLUTION: A semiconductor manufacturing method comprises a step of heating a base 2 inside the semiconductor device, which is an interlayer insulation film on which a contact hole 5 and/or a line is formed, and flowing an aminosilane-based gas to the heated base 2 to form a seed layer 3 on a surface of the base 2, and a step of heating the base 2, supplying a silane-based gas not including amino group to the seed layer 3 on the surface of the heated base 2 and pyrolyzing the silane-based gas not including amino group thereby to form an amorphous silicon film 4 on the seed layer 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
